Direct extraction feature for scattering parameters of SiGe-HBTs

نویسندگان

  • S. Wagner
  • V. Palankovski
  • G. Röhrer
  • T. Grasser
  • S. Selberherr
چکیده

We present a direct approach to obtain scattering parameters (S-parameters) and other derived figures of merit of SiGe-HBTs by means of small-signal (ac) analysis. Therefore, an additional simulation mode has been implemented in the three-dimensional device simulator MINIMOS-NT. Several additional features are provided for efficiently obtaining various small-signal parameters. The accuracy of the results is proven by analytical methods and by comparison with measurements. # 2003 Elsevier B.V. All rights reserved. PACS: 85.30.Pq; 85.30.De

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Critical Modeling Issues of SiGe Semiconductor Devices

We present the state-of-the-art in simulation of Silicon-Germanium (SiGe) semiconductor devices. The work includes a detailed comparison of device simulators and current transport models. Among the critical modeling issues addressed in the paper, special attention is focused on the description of the anisotropic majority/minority electron mobility in strained SiGe grown on Si. We use a direct a...

متن کامل

Device Parameter Optimization of Silicon Germanium HBT for THz Applications

Now-a-days SiGe HBTs are surpassing even the fastest III-V production devices in the high–speed orbit. The state-of-art in simulation of silicon germanium semiconductor devices is presented in this paper. A comprehensive course of action to model the device parameter characterization of High Frequency 0.1μm SiGe HBT is depicted which is based on the technique of direct parameter extraction. Wit...

متن کامل

High Frequency Characterization and Modeling of SiGe Heterojunction Bipolar Transistors

High-speed, low voltage Silicon-Germanium (SiGe) heterojunction bipolar transistors (HBTs) have been designed, fabricated, electrically characterized and modeled. The SiGe HBTs are suitable for use in radio frequency (RF) integrated circuit (IC) applications and were fabricated using non-selective epitaxial growth. The design of the extrinsic base region has been investigated in detail. Transie...

متن کامل

Characterization of Extracted Y- and Z- Parameters for Hf Applications

In last several decades silicon-germanium (SiGe) technology has come into the global electronics marketplace. Commercial SiGe HBT facilitates transceiver designs and recommends transistor-level performance metrics which are competitive with the best III-V technologies (InP or GaAs), while sustaining strict fabrication compatibility with high yielding, low-cost, Si CMOS foundry processes on larg...

متن کامل

A Dissertation for the Degree of Master of Science Low-frequency Noise Power Spectrum Density Characterizing of SiGe HBTs

The main purposes of this thesis are the Low-Frequency Noise measurement of SiliconGermanium Heterojunction Bipolar Transistors and its Power Spectrum Density Characterizing. The new generation 375 GHZ SiGe HBTs were measured in this work. We show that most of PSDs of the new generation SiGe HBTs have very ”bumpy” spectra which is contributed by GR noise sources. We investigated their basic cha...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2004